Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition

Academic Article

Abstract

  • We have investigated the effects of different annealing treatments on silicon dioxide films produced from the reaction of dichlorosilane and nitrous oxide at 700° C. The electrical quality of these LPCVD films was evaluated by measuring oxide charge and interface trap densities on metal oxide semiconductor (MOS) capacitors. These densities were measured before and after avalanche injection of electron currents into the oxide films. The results of these studies were as follows. (1) The LPCVD oxide films required a post deposition anneal at 1000° C to produce as-grown charge densities similar to those of a standard dry thermal oxide grown and annealed at 1000° C. (2) Post-injection charge densities of LPCVD films given a post deposition anneal at 1000°C were an order of magnitude greater than those of the standard dry thermal oxide. (3) Different annealing treatments produced a series of dominant electron trapping centers in the oxide bulk17 with capture cross sections ranging from 10-14 cm2 to 10-17 cm2. (4) The electron traps in the LPCVD oxides films were similar to those previously observed in standard wet thermal oxides grown and annealed above 1000° C. © 1985 AIME.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Feigl FJ; Butler SR; Titcomb SL
  • Start Page

  • 343
  • End Page

  • 366
  • Volume

  • 14
  • Issue

  • 3