The effect of growth parameters on the Mg acceptor in InxGa1-xN: MG and AlxGa1-xN: Mg

Academic Article

Abstract

  • InxGa1-xN and AlxGa1-xN alloys are used in many optoelectronic applications due to their tunable band gap, but p-type doping remains a challenge. To better understand the Mg acceptor in nitride alloys, we investigate the effects of In or Al mole fraction, growth temperature and sample thickness on the amount of un-ionized (neutral) Mg using electron paramagnetic resonance (EPR) spectroscopy. The results show that neither temperature nor thickness effects the concentration of the neutral Mg-related acceptor defects; however, the mole fraction of metal, In or Al, alters the behavior of the dopant. For InxGa1-xN, a broadening of the EPR linewidth is shown to be directly related to the presence of a nearby In and is consistent with a lowering of the acceptor level. Incorporation of Al into GaN, on the other hand, produces a systematic decrease in the concentration of neutral Mg-related acceptors as the amount of Al increases. Earlier studies indicate that the reduction is caused by incomplete hydrogen removal from the acceptor impurity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
  • Authors

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    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Willoughby WR; Sunay UR; Koleske DD; Allerman AA; Wang K; Araki T; Nanishi Y
  • Start Page

  • 594
  • End Page

  • 597
  • Volume

  • 11
  • Issue

  • 3-4