Effect of negative bias temperature instability on the single event upset response of 40 nm flip-flops

Academic Article

Abstract

  • Negative bias temperature instability has been experimentally demonstrated to increase the cross-section of the single event response for 40 nm flip-flops. Analysis on the underlying mechanisms, including threshold voltage shift, is presented. © 1963-2012 IEEE.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Kauppila AV; Bhuva BL; Loveless TD; Jagannathan S; Gaspard NJ; Kauppila JS; Massengill LW; Wen SJ; Wong R; Vaughn GL
  • Start Page

  • 2651
  • End Page

  • 2657
  • Volume

  • 59
  • Issue

  • 6