Memory effects in photoinduced femtosecond magnetization rotation in ferromagnetic GaMnAs

Academic Article

Abstract

  • We report a photoinduced femtosecond change in the magnetization direction in the ferromagnetic semiconductor GaMnAs, which allows for the detection of a four-state magnetic memory on the femtosecond time scale. The temporal profile of the magnetization exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a carrier-mediated nonthermal regime within the first 200 fs to a thermal, lattice-heating picosecond regime. © 2009 American Institute of Physics.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Wang J; Cotoros I; Chemla DS; Liu X; Furdyna JK; Chovan J; Perakis IE
  • Volume

  • 94
  • Issue

  • 2