Memory Effect in the Photoinduced Femtosecond Rotation of Magnetization in the Ferromagnetic Semiconductor GaMnAs

Academic Article

Abstract

  • We report a femtosecond response in photoinduced magnetization rotation in the ferromagnetic semiconductor GaMnAs, which allows for detection of a four-state magnetic memory at the femtosecond time scale. The temporal profile of this cooperative magnetization rotation exhibits a discontinuity that reveals two distinct temporal regimes, marked by the transition from a highly non-equilibrium, carrier-mediated regime within the first 200 fs, to a thermal, lattice-heating picosecond regime.
  • Authors

    Keywords

  • cond-mat.mtrl-sci, cond-mat.mtrl-sci, cond-mat.str-el
  • Author List

  • Wang J; Cotoros I; Liu X; Chovan J; Furdyna JK; Perakis IE; Chemla DS