Atomic structure of Ge-related point defects in Ge-incorporated oxide films

Academic Article


  • Germanium-incorported oxides formed by high pressure wet oxidation of Si90Ge10 substrates are examined using electron paramagnetic resonance spectroscopy. Simulations based on the g tensor for the Ge E' center suggest that the dominant defect observed in annealed 10 Mrad irradiated samples is an oxygen vacancy at a site of a substitutional Ge atom. Comparison of thin film and bulk samples suggests that the centers found in the films are associated with hydrogen. The results presented here should be directly applicable to optical components fabricated on semiconductor substrates for photon integrated circuits.
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Carlos WE; Paine DC; Caragianis C
  • Start Page

  • 3049
  • End Page

  • 3051
  • Volume

  • 63
  • Issue

  • 22