The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC

Academic Article


  • We examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (<10 ppm H2O) N2 heat treatment, and after standard (approximately 50 ppm H2O) Ar annealing. A center is observed following dry heat treatment at temperatures greater than 800°C. This center is passivated by standard Ar annealing at temperatures greater than 700°C and regenerated after subsequent dry heat treatment. We suggest that this defect is related to an unpaired electron on a carbon atom created by the release of a hydrogen-related species. © 1997 American Institute of Physics.
  • Authors

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    Digital Object Identifier (doi)

    Author List

  • Macfarlane PJ; Zvanut ME
  • Start Page

  • 2148
  • End Page

  • 2150
  • Volume

  • 71
  • Issue

  • 15