Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC

Academic Article


  • Electron paramagnetic resonance studies show that defects are activated in oxidized 3C-SiC and 6H-SiC by heat-treatments at temperatures greater than 800 °C in dry (<1 ppm H2O) N2 or O2 ambients. Annealing in forming gas (7% H2, 93% N2) at 700 °C completely passivates the centers induced by the dry heat-treatment. By contrasting the generation and annealing kinetics for these centers with the well studied Si dangling bond, we suggest that the centers in the oxidized SiC are C dangling bonds created by hydrogen effusion during the dry heat-treatment.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Macfarlane PJ; Zvanut ME
  • Start Page

  • 144
  • End Page

  • 147
  • Volume

  • 28
  • Issue

  • 3