The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy

Academic Article

Abstract

  • Electron paramagnetic resonance (EPR) spectroscopy is used to study the unpassivated Mg-related acceptor in GaN films. As expected, the trends observed before and after O2, N2, or forming-gas anneals at temperatures <800°C are similar to those typically reported for electrical measurements. However, annealing at temperatures >850°C in O2 or N2 permanently removes the signal, contrary to the results of conductivity measurements. Approximately 1019 cm -3 Mg acceptors were detected in some GaN films grown by chemical vapor deposition (CVD) before acceptor activation, suggesting that it is possible to have electrically active Mg in as-grown CVD material.
  • Authors

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    Digital Object Identifier (doi)

    Author List

  • Matlock DM; Zvanut ME; Wang H; Dimaio JR; Davis RF; Van Nostrand JE; Henry RL; Koleske D; Wickenden A
  • Start Page

  • 34
  • End Page

  • 39
  • Volume

  • 34
  • Issue

  • 1