The acceptor level for vanadium in 4H and 6H SiC

Academic Article

Abstract

  • Electron paramagnetic resonance (EPR) and temperature-dependent Hall measurements were performed on seven different vanadium-doped semi-insulating SiC samples. Comparison of the EPR data and carrier activation energy suggests that the acceptor level for vanadium is 1.1 eV below the conduction band edge (E ) in 4H SiC and within 0.86 of E in the 6H polytype. Photo-induced EPR results support the level assignments. However, analysis of the V spectra in 4H samples suggests that the dominant vanadium EPR signal monitored in the 4H samples used for this experiment does not represent a simple isolated impurity. Rather, the results reflect a strained or complex defect. © 2005 Elsevier B.V. All rights reserved. c c 4+
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Lee W; Mitchel WC; Mitchell WD; Landis G
  • Start Page

  • 346
  • End Page

  • 349
  • Volume

  • 376-377
  • Issue

  • 1