Radiation-induced E' centers in H2-annealed oxide films

Academic Article


  • In oxides fabricated by thermal oxidation or ion implantation, an order-of-magnitude increase is observed in the concentration of radiation-induced E' centers when the oxide is first exposed to H2 at temperatures greater than 600°C. To the authors' knowledge, we report the first data indicating that preirradiation hydrogen annealing of thermal oxides causes a large increase in the concentration of radiation-induced E' centers. We discuss evidence suggesting that the hydrogen anneal creates a new E' precursor, Si - H, from Si - Si bonds.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Stahlbush RE; Carlos WE
  • Start Page

  • 2989
  • End Page

  • 2991
  • Volume

  • 60
  • Issue

  • 24