Forward-bias steady-state currents in p-i-n a-Si:H structures produce significant electroluminescence (EL). We have measured the EL as a function of temperature under constant-current conditions. We find that the EL exhibits the same temperature dependence as photoluminescence (PL), namely exp(-T/T0*). For EL, however, T0* is proportional to the cube root of the current. A simple model based on the experimental results is presented. © 1991 Taylor & Francis Ltd.