Temperature and current dependence of electroluminescence in a-Si: H

Academic Article

Abstract

  • Forward-bias steady-state currents in p-i-n a-Si:H structures produce significant electroluminescence (EL). We have measured the EL as a function of temperature under constant-current conditions. We find that the EL exhibits the same temperature dependence as photoluminescence (PL), namely exp(-T/T0*). For EL, however, T0* is proportional to the cube root of the current. A simple model based on the experimental results is presented. © 1991 Taylor & Francis Ltd.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Wang K; Han D; Zvanut ME; Silver M
  • Start Page

  • 175
  • End Page

  • 187
  • Volume

  • 63
  • Issue

  • 1