In a previous study of oxidized 6H-SiC, we have used electron paramagnetic resonance (EPR) to observe a defect center that is present in SiC after oxidation and dry heat-treatment. The spectroscopic and annealing characteristics of this center indicate that it is likely a C dangling bond made EPR-active by the release of a hydrogen species during dry heat-treatment. In this study, we examine what effects different oxidation parameters have on the density of centers produced. We find that the termination procedures of the oxidation process have the largest effect on the concentration of centers. In addition, we compare our results with electrical studies preformed by others to examine what, if any, relationship exists between the defect center and electrically active defects.