Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy

Academic Article

Abstract

  • Electron paramagnetic resonance (EPR) measurements were performed on GaN:Mg epitaxial films grown on sapphire by chemical vapor deposition. Isochronal annealing studies between 200 and 850°C show that the temperature dependence for activation of a resonance at g∥=2.1 was consistent with the previous interpretation of the signal as a Mg-related acceptor. Furthermore, EPR measurements performed on samples after consecutive 30-min-heat treatments in dry N2, N2:H2, and dry N2 showed that the center could be activated, passivated, and reactivated as expected for the p-type acceptor center in GaN.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Zvanut ME; Matlock DM; Henry RL; Koleske D; Wickenden A
  • Start Page

  • 1884
  • End Page

  • 1887
  • Volume

  • 95
  • Issue

  • 4