Passivation and activation of Mg acceptors in heavily doped GaN

Academic Article

Abstract

  • Electron paramagnetic resonance measurements are used to monitor the passivation and activation of the Mg-related acceptor in GaN doped with different concentrations of Mg, up to 2 × 1020 cm-3. Samples were annealed in either forming gas (H2:N2) or pure N2 between 200 and 900°C. As expected, the Mg-related EPR signal is reduced by at least a factor of ten during the forming gas treatment; while the pure N2 environment revives the signal. However, the study also shows that reactions between Mg and hydrogen occur at a temperature as low as 525°C in the 1020 cm-3 Mg doped samples; while in more lightly doped samples, temperatures greater than 700°C are required to observe changes in the Mg signal intensity. While the observations support the model in which a hydrogen atom ionizes at the Mg impurity and the remaining proton bonds at a near neighbor, the different temperature dependence suggests that hydrogen diffusion is affected by the increased Mg concentration. © 2011 American Institute of Physics.
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    Author List

  • Zvanut ME; Uprety Y; Dashdorj J; Moseley M; Alan Doolittle W
  • Volume

  • 110
  • Issue

  • 4