Optimisation of (Al,Ga)As/GaAs two-dimensional electron gas structures for low carrier densities and ultrahigh mobilities at low temperatures

Academic Article

Abstract

  • The authors have grown (Al,Ga)As/GaAs two-dimensional electron gas (2DEG) structures with lightly doped regions of (Al,Ga)As and superlattices in the undoped GaAs. Using this technique, they have obtained ultralow density (2*1010 cm-2), high-mobility samples where phonon scattering at 4 K is the dominant factor in limiting the mobility; reducing the measurement temperature to below 1.5 K gives mobilities of up to 107 cm2 V-1 s-1.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Foxon CT; Harris JJ; Hilton D; Hewett J; Roberts C
  • Start Page

  • 582
  • End Page

  • 585
  • Volume

  • 4
  • Issue

  • 7