Raman spectroscopy of GaAs-AlAs superlattices: a study of interface roughness

Academic Article

Abstract

  • The roughness of the interfaces in a series of (AlAs)n1 (GaAs)n2 (AlAs)n3 (GaAs)n4 superlattices has been measured by comparing the Raman frequencies of the confined GaAs-like LO phonons with results from a linear chain model modified to incorporate a description of the roughness. A new model is developed which shows that the interface roughness parameter W of a layer of average thickness n monolayers can be described by the expression W2 = αnns/(αn + ns), with α = 1 and ns = 2 and 5 for GaAs and AlAs, respectively. © 1994.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • York RJ; Smith SRP; Dumelow T; Foxon CT; Hilton D; Orton JW
  • Start Page

  • 349
  • End Page

  • 352
  • Volume

  • 60-61
  • Issue

  • C