Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method

Academic Article

Abstract

  • © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. An acceptor-related impurity was studied in bulk free standing GaN using electron paramagnetic resonance spectroscopy. Both undoped and Mg-doped substrates grown by the high nitrogen pressure solution method were examined, but only the doped sample revealed the presence of an EPR-detected center. Comparison with earlier work on p -type GaN films suggests that the defect is an acceptor, heavily compensated during growth. Photo-EPR studies revealed a photo-ionization threshold of 2.8 eV, which is interpreted as excitation of an electron from the acceptor to the conduction band. Based on the concentration and photo-threshold, the EPR center detected in the HNPS doped samples is tentatively identified as Be, which SIMS measurements indicate is a trace impurity in the doped GaN sample.
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    Digital Object Identifier (doi)

    Author List

  • Dashdorj J; Willoughby WR; Zvanut ME; Bockowski M
  • Start Page

  • 338
  • End Page

  • 340
  • Volume

  • 12
  • Issue

  • 4-5