Gamma radiation-enhanced thermal diffusion of iron ions into II-VI semiconductor crystals

Academic Article


  • We investigate the effect of γ-irradiation on the rate of post-growth thermal diffusion of iron into ZnSe and ZnS. Samples had thin films of iron deposited on one facet and were annealed at 950°C for 14 days in the presence of γ-radiation and diffusion lengths were compared to those of traditional post-growth thermal diffusion in the absence of γ-irradiation. Samples of Fe:ZnSe and Fe:ZnS annealed under 44R/s γ-irradiation showed increases in diffusion rate of 14% and 50%, respectively.
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Martinez A; Williams L; Fedorov V; Mirov S
  • Start Page

  • 558
  • End Page

  • 565
  • Volume

  • 5
  • Issue

  • 3