Metal microbolometers, used in scanning thermal microscopy, were microfabricated from <20 nm titanium thin films on Si O2 / Si 3 N4 /Si O2 cantilevers. These thin films are near the metal-insulator transition regime such that as the film thickness decreases-the resistance increases and the current-voltage characteristics cross over from sublinear to superlinear. In addition, the temperature coefficient of resistance transitions from positive to negative before it plateaus at a negative value. Thin titanium films exhibit negative temperature coefficient of resistance as high as -0.0067/K which is higher than that of bulk titanium films. © 2009 American Institute of Physics.