Mid-IR luminescence of nanocrystalline II-VI semiconductors doped with transition metal ions

Academic Article


  • A novel method of transition metal (TM)-doped II-VI nanocrystal production by laser ablation in a liquid environment is presented. The method enables fabrication of II-VI nanocrystals doped with a variety of TM ions using laser ablation of thermodiffusion-doped polycrystalline targets. The crystalline grain size and structure of nanocrystals was studied by XRD using angle mode of diffractometer with a Cu-K-alpha anode. The method has a significant advantage over chemical methods because of its simplicity and the absence of residual organic molecules on the surface of the nanoparticles. TM-doped II-VI nanocrystals demonstrated strong mid-IR luminescence. This technology also opens new pathways for future developments of optically and electrically pumped mid-IR lasers based upon TM-doped quantum confined structures.
  • Published In

    Author List

  • Kim C; Martyshkin DV; Fedorov VV; Moskalev IS; Mirov SB
  • Start Page

  • 32
  • End Page

  • 37
  • Volume

  • 22
  • Issue

  • 9