LUMINESCENCE AND THERMAL ANNEALING OF SPUTTERED DEPOSITED THULIUM- AND SAMARIUM-DOPED AMORPHOUSAlNFILMS

Academic Article

Abstract

  • Thin films of thulium- and samarium-dopedAlNare deposited on silicon (111) substrates at 77 K by RF magnetron sputtering method. 200–400 nm thick films are grown at 100–200 watts RF power and 5–8 mTorr nitrogen, using a metal target ofAlwithTmandSmseparately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed inTmat 467 nm from1D2→3F4transition and 480 nm from1G4to the ground state3H6transition. Other peaks in the visible region are obtained at 650 nm and 685 nm due to1G4→3F4and1D2→3H4transitions. Peaks in the ultraviolet and infrared region are also obtained at 371 nm and 802 nm as a result from1D2→3H6and3H4→3H6transition, respectively.Smgives four peaks at 564 nm, 600 nm, 648 nm and 707 nm as a result of4G5/2→6H5/2,4G5/2→6H7/2,4G5/2→6H9/2and4G5/2→6H11/2transitions. Films are thermally annealed at 1200 K for half an hour in a nitrogen atmosphere. Thermal annealing enhances the intensity of luminescence.
  • Published In

    Keywords

  • Thin film deposition, luminescence, thermal annealing, thulium, samarium, AlN
  • Author List

  • MAQBOOL M
  • Start Page

  • 767
  • End Page

  • 771
  • Volume

  • 12
  • Issue

  • 05n06