High-pressure phase transitions and equation of state of the III-V compound InAs up to 27 GPa

Academic Article

Abstract

  • The III-V semiconductor compound InAs has been studied under high pressure in a diamond-anvil cell up to 27 GPa by energy-dispersive x-ray diffraction using the Cornell High Energy Synchrotron Source (CHESS). It shows the zinc-blende to rocksalt transformation at (70.2) GPa and a further transformation at (170.4) GPa to a -Sntype structure with increasing pressure. The zinc-blende to rocksalt phase transition which is associated with metallization is accompanied by a 17% volume collapse while the rocksalt to the -Sn transformation has no volume discontinuity within experimental errors. This structural sequence is the same as that observed in several II-VI compounds under high pressures. The results are discussed in view of theoretical pseudopotential total-energy calculations of III-V compounds in various phases and comparison is made with available experimental data on InP and InSb. © 1985 The American Physical Society.
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    Digital Object Identifier (doi)

    Author List

  • Vohra YK; Weir ST; Ruoff AL
  • Start Page

  • 7344
  • End Page

  • 7348
  • Volume

  • 31
  • Issue

  • 11