Luminescence Enhancement in Amorphous AlN:W by Co-Doped Gd+3

Academic Article

Abstract

  • © 2015 IEEE. Thin films of amorphous AlN:W are deposited on Si(111) substrates by RF magnetron sputtering at liquid nitrogen temperature. The deposited films are characterized for their luminescence properties using cathodoluminescence. A very broad luminescence from tungsten is observed with a relatively more intense peak at 491 nm and less intense at 429 nm. The addition of gadolinium enhanced the bluish-green emission from W+3 more than six times. The cause for enhanced luminescence is the ultraviolet radiative energy transfer and not the electronic transition from Gd+3 to W+3. The addition of Gd+3 dopant also shuffled the energy levels of W+3 and red shift is observed in the tungsten emission. The spectroscopy and ultraviolet light emission from Gd+3 play important role in the enhanced luminescence from AlN:W.
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Maqbool M; Ali G; Ahmad I; Maaz K
  • Start Page

  • 1519
  • End Page

  • 1522
  • Volume

  • 27
  • Issue

  • 14