Cr-doped III-V nitrides: Potential candidates for spintronics

Academic Article

Abstract

  • Studies of Cr-doped III-V nitrides, dilute magnetic alloys in the zincblende crystal structure, are presented. The objective of the work is to investigate half-metallicity in Al Cr N, Ga Cr N, and In Cr N for their possible application in spin-based electronic devices. The calculated spin-polarized band structures, electronic properties, and magnetic properties of these compounds reveal that Al Cr N and Ga Cr N are half-metallic dilute magnetic semiconductors while In Cr N is metallic in nature. The present theoretical predictions provide evidence that some Cr-doped III-V nitrides can be used in spintronics devices. © 2011 TMS. 0.75 0.25 0.75 0.25 0.75 0.25 0.75 0.25 0.75 0.25 0.75 0.25
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    Digital Object Identifier (doi)

    Author List

  • Amin B; Arif S; Ahmad I; Maqbool M; Ahmad R; Goumri-Said S; Prisbrey K
  • Start Page

  • 1428
  • End Page

  • 1436
  • Volume

  • 40
  • Issue

  • 6