Isotopically pure 13C layer as a stress sensor in a diamond anvil cell

Academic Article

Abstract

  • Isotopically pure 13C homoepitaxial diamond layer was grown on top of a brilliant cut diamond anvil using a microwave plasma chemical vapor deposition process for application as a stress sensor. To generate high pressure on a soft sample containing carbon nanotubes to 100 GPa, the isotopically pure diamond tip was used in conjunction with a natural abundance 12C diamond anvil. It was observed that the 13C diamond Raman signal remained a distinct single peak showing that the mean normal stress experienced by the thin layer is uniform to the highest pressure. A ruby pressure sensor was used to relate the stress-induced shift of the 13C layer to the quasihydrostatic pressure in the sample chamber.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Qiu W; Velisavljevic N; Baker PA; Vohra YK; Weir ST
  • Start Page

  • 5308
  • End Page

  • 5310
  • Volume

  • 84
  • Issue

  • 26