Spectroscopic studies of molecular-beam epitaxially grown Cr2+ -doped ZnSe thin films

Academic Article


  • Cr:ZnSe thin films were grown by molecular-beam epitaxy with the long-term goal of demonstrating a route for the development of transitional-metal-doped semiconductor lasers. Photoluminescence (PL) and PL lifetime measurements of doped thin films and bulk crystals indicate that Cr is incorporated in the optically active Cr2+ state up to levels of 5× 1019 cm-3. The shape of PL spectra and lifetime measurements of doped thin films compares favorably with that reported for bulk samples. A microcavity formed by film interfaces is responsible for differences in spontaneous emission observed between films and bulk crystals. © 2005 American Institute of Physics.
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Gallian A; Fedorov VV; Kernal J; Allman J; Mirov SB; Dianov EM; Zabezhaylov AO; Kazakov IP
  • Start Page

  • 1
  • End Page

  • 3
  • Volume

  • 86
  • Issue

  • 9