Ultra-smooth nanostructured diamond films deposited from He/H 2/CH4/N2 microwave plasmas

Academic Article


  • Addition of He to a high CH4 content (10.7 vol%) H 2/CH4/N2 feedgas mixture for microwave plasma chemical vapor deposition produced hard (58-72 GPa), ultra-smooth nanostructured diamond films on Ti-6Al-4V alloy substrates. Upon increase in He content up to 71 vol%, root mean squared (RMS) surface roughness of the film decreased to 9-10 nm and average diamond grain size to 5-6 nm. Our studies show that increased nanocrystallinity with He addition in plasma is related to plasma dilution, enhanced fragmentation of carbon containing species, and enhanced formation of CN radical. Copyright © 2006 American Scientific Publishers All rights reserved.
  • Author List

  • Konovalov VV; Melo A; Catledge SA; Chowdhury S; Vohra YK
  • Start Page

  • 258
  • End Page

  • 261
  • Volume

  • 6
  • Issue

  • 1