Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

Academic Article

Abstract

  • We investigate the effects of reduced exciton diffusion on the emission properties in InGaN/GaN multiple-quantum-well nanorods. Timeresolved photoluminescence spectra are recorded and compared in dryetched InGaN/GaN nanorods and parent multiple quantum wells at various temperatures with carrier density in different regimes. Faster carrier recombination and absence of delayed rise in the emission dynamics are found in nanorods. Many effects, including surface damages and partial relaxation of the strain, may cause the faster recombination in nanorods. Together with these enhanced carrier recombination processes, the reduced exciton diffusion may induce the different temperature-dependent emission dynamics characterized by the delayed rise in time-resolved photoluminescence spectra. © 2012 Optical Society of America.
  • Authors

    Published In

  • Optics Express  Journal
  • Digital Object Identifier (doi)

    Author List

  • Jiang B; Zhang C; Wang X; Xue F; Park MJ; Kwak JS; Xiao M
  • Start Page

  • 13478
  • End Page

  • 13487
  • Volume

  • 20
  • Issue

  • 12