Applied Physics Letters

Journal

Publication Venue For

  • Optically detected magnetic resonance of nitrogen vacancies in a diamond anvil cell using designer diamond anvils.  111. 2017
  • Mid-infrared light emission from a Fe2+:ZnSe polycrystal using quantum cascade laser pumping.  105. 2014
  • Role of size and defects in ultrafast broadband emission dynamics of ZnO nanostructures.  104. 2014
  • Manganese induced modifications in yttria stabilized zirconia.  101. 2012
  • Ultrafast polariton population build-up mediated by molecular phonons in organic microcavities.  99. 2011
  • All-optical four-state magnetization reversal in (Ga,Mn)As ferromagnetic semiconductors.  99. 2011
  • Characterization of room temperature metal microbolometers near the metal-insulator transition regime for scanning thermal microscopy.  95. 2009
  • The role of the nanospine in the nanocomb arrays for surface enhanced Raman scattering.  94. 2009
  • Memory effects in photoinduced femtosecond magnetization rotation in ferromagnetic GaMnAs.  94. 2009
  • Direct ultraviolet excitation of an amorphous AlN:praseodymium phosphor by codoped Gd3+ cathodoluminescence.  91. 2007
  • Coherent magnetization precession in GaMnAs induced by ultrafast optical excitation.  91. 2007
  • Tunneling magnetoresistance observed in La0.67Sr0.33MnO3/organic molecule/Co junctions.  90:072506-072506. 2007
  • Angle dependent surface enhanced Raman scattering obtained from a Ag nanorod array substrate.  89. 2006
  • Aggregated nanoparticle structures prepared by thermal decomposition of poly(vinyl)-N-pyrrolidone/Ag nanoparticle composite films.  87:1-3. 2005
  • Aligned silver nanorod arrays produce high sensitivity surface-enhanced Raman spectroscopy substrates.  87. 2005
  • Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy.  86:1-3. 2005
  • Spectroscopic studies of molecular-beam epitaxially grown Cr2+ -doped ZnSe thin films.  86:1-3. 2005
  • Chemical ordering in ilmenite-hematite bulk ceramics through proton irradiation.  85:5902-5904. 2004
  • Isotopically pure 13C layer as a stress sensor in a diamond anvil cell.  84:5308-5310. 2004
  • Excited state lifetime and intersystem crossing rate of asymmetric pentaazadentate porphyrin-like metal complexes.  84:5174-5176. 2004
  • Tunable distributed feedback color center laser using stabilized F 2+** color centers in LiF crystal.  84:3022-3024. 2004
  • Electrical measurements on praseodymium metal to 179 GPa using designer diamond anvils.  84:927-929. 2004
  • Ultrafast conductivity dynamics in pentacene probed using terahertz spectroscopy.  84:891-893. 2004
  • Effect of nitrogen addition on the morphology and structure of boron-doped nanostructured diamond films.  83:5047-5049. 2003
  • Isotopically enriched designer-diamond anvil.  83:1734-1736. 2003
  • Bioceramic hydroxyapatite at high pressures.  82:4271-4273. 2003
  • Mapping electron flow using magnetic force microscopy.  82:3287-3289. 2003
  • Structural and mechanical properties of nanostructured metalloceramic coatings on cobalt chrome alloys.  82:1625-1627. 2003
  • Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si.  81:4215-4217. 2002
  • Ultrafast dynamics of interfacial electric fields in semiconductor heterostructures monitored by pump-probe second-harmonic generation.  81:3717-3719. 2002
  • X-ray diffraction and nanoindentation studies of nanocrystalline graphite at high pressures.  81:2073-2075. 2002
  • Ultrafast spin dynamics in GaAs/GaSb/InAs heterostructures probed by second harmonic generation.  81:220-222. 2002
  • Gas-phase thermodynamic models of nitrogen-induced nanocrystallinity in chemical vapor-deposited diamond.  80:2550-2552. 2002
  • The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance.  80:410-412. 2002
  • Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope.  79:3678-3680. 2001
  • Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size.  79:2883-2885. 2001
  • Spectroscopic analysis and persistent photon-gated spectral hole burning in LiF:F-2 color center crystal.  79:2318-2320. 2001
  • Observation of current crowding near fabricated voids in gold lines.  78:2661-2663. 2001
  • Degenerate four-wave mixing and Z-scan measurements of stilbazolium derivatives.  78:1817-1819. 2001
  • Nanoindentation hardness and atomic force microscope imaging studies of pressure-quenched zirconium metal.  77:3568-3570. 2000
  • Epitaxial diamond encapsulation of metal microprobes for high pressure experiments.  77:3400-3402. 2000
  • Third-order nonlinear optical properties of an expanded porphyrin cadmium complex.  77:1759-1761. 2000
  • Nanoindentation and x-ray diffraction studies of pressure-induced amorphization in C-70 fullerene.  77:851-853. 2000
  • Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films.  75:3874-3876. 1999
  • Imaging of microwave permittivity, tunability, and damage recover in (Ba, Sr)TiO3 thin films.  75:3180-3182. 1999
  • Scaling of ferroelectric properties in thin films.  75:409-411. 1999
  • Third-order susceptibilities of asymmetric pentaazadentate porphyrin-like metal complexes.  74:3254-3256. 1999
  • In situ diagnostics of film thickness and surface roughness of diamond films on a Ti-6Al-4V alloy by optical pyrometry.  73:181-183. 1998
  • Optical limiting performances of asymmetric pentaazadentate porphyrin-like cadmium complexes.  73:1167-1169. 1998
  • Erratum: Optical limiting performances of asymmetric pentaazadentate porphyrin-like cadmium complexes (Appl. Phys. Lett. (1998) 73 (1167) (10.1063/1.122366)).  73:2218. 1998
  • Pressure-induced blueshift of Nd3+ fluorescence emission in YAIO3: Near infrared pressure sensor.  71:2602-2604. 1997
  • The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC.  71:2148-2150. 1997
  • Resonance Raman and photoluminescence investigations of micro-twins in homoepitaxially grown chemical vapor deposited diamond.  71:321-323. 1997
  • Fluorescence emission from high purity synthetic diamond anvil to 370 GPa.  68:2049-2051. 1996
  • Size classification of silicon nanocrystals.  68:3162-3164. 1996
  • Production of E′δ center induced by dry heat treatment of nonburied SiO2 films.  69:28-30. 1996
  • Fluorescence emission from high purity synthetic diamond anvil to 370 GPa.  2049. 1995
  • Homoepitaxial diamond film deposition on a brilliant cut diamond anvil.  1486. 1995
  • Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy.  65:2287-2289. 1994
  • Nitrogen in the isotopically enriched 12C diamond.  65:2951-2953. 1994
  • Nonlinear reflection at a dielectric-carbon suspension interface: Macroscopic theory and experiment.  64:2081-2083. 1994
  • Sm:YAG optical pressure sensor to 180 GPa:Calibration and structural disorder.  64:3386-3388. 1994
  • Atomic structure of Ge-related point defects in Ge-incorporated oxide films.  63:3049-3051. 1993
  • Distribution of Ge in O+ implanted silicon.  61:3142-3144. 1992
  • Isotopically pure diamond anvil for ultrahigh pressure research.  61:2860-2862. 1992
  • Radiation-induced E' centers in H2-annealed oxide films.  60:2989-2991. 1992
  • Generating near-earth-core pressures with type-IIa diamonds.  59:2681-2682. 1991
  • Nanosecond laser-induced cavitation in carbon microparticle suspensions: Applications in nonlinear interface switching.  58:2195-2197. 1991
  • Optical properties of diamond at pressures of the center of Earth.  57:1007-1009. 1990
  • Optical reflectivity and amorphization of GaAs during decompression from megabar pressures.  57:2666-2668. 1990
  • Multimegabar pressures using synthetic diamond anvils.  55:232-234. 1989
  • Rechargeable E' centers in sputter-deposited silicon dioxide films.  54:2118-2120. 1989
  • Slope resistance characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures.  52:305-307. 1988
  • International Standard Serial Number (issn)

  • 0003-6951
  • Electronic International Standard Serial Number (eissn)

  • 1077-3118