Browse
Browse
Home
People
Organizations
Research
Events
Capability Map
Journal of Luminescence
Journal
Overview
Identity
Overview
Publication Venue For
Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
. 223.
2020
Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays
. 222.
2020
Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals
. 132:600-606.
2012
En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II-VI semiconductors
. 125:184-195.
2007
Direct nanosecond Nd → Ce nonradiative energy transfer in cerium trifluoride laser crystals
. 101:211-218.
2003
Temperature-dependent spectroscopic analysis of F
2
+
** and F
2
+
**-like color centers in LiF
. 91:147-153.
2000
Strong coherent interaction of Nd
3+
-Nd
3+
pair ions in CaF
2
crystal
. 81:189-197.
1999
Multiphonon sideband intensities in rare earth ions in crystal
. 83-84:171-175.
1999
Nonradiative relaxation and inhomogeneous splitting of aggregated optical centers in the Nd
3+
-doped CaF
2
and SrF
2
crystals (FLN and decay study)
. 83-84:361-366.
1999
Electron trapping by self-trapped hole pairs and small rare-earth clusters in Sm-doped CaF
2
. 79:241-248.
1998
New trends in tunable lasers based on color center and radiationally pertubed doped crystals
. 72-74:9-11.
1997
Photoluminescence studies in Sc : CaF
2
and Sc,Ce : CaF
2
crystals
. 69:35-40.
1996
Raman spectroscopy of GaAs-AlAs superlattices: a study of interface roughness
. 60-61:349-352.
1994
Identity
International Standard Serial Number (issn)
0022-2313