Journal of Luminescence


Publication Venue For

  • Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation.  223. 2020
  • Effects of rapid thermal annealing in InGaN/GaN quantum disk-in-GaN nanowire arrays.  222. 2020
  • Temperature and concentration quenching of mid-IR photoluminescence in iron doped ZnSe and ZnS laser crystals.  132:600-606. 2012
  • En route to electrically pumped broadly tunable middle infrared lasers based on transition metal doped II-VI semiconductors.  125:184-195. 2007
  • Direct nanosecond Nd → Ce nonradiative energy transfer in cerium trifluoride laser crystals.  101:211-218. 2003
  • Temperature-dependent spectroscopic analysis of F2+** and F2+**-like color centers in LiF.  91:147-153. 2000
  • Strong coherent interaction of Nd3+-Nd3+ pair ions in CaF2 crystal.  81:189-197. 1999
  • Multiphonon sideband intensities in rare earth ions in crystal.  83-84:171-175. 1999
  • Nonradiative relaxation and inhomogeneous splitting of aggregated optical centers in the Nd3+-doped CaF2 and SrF2 crystals (FLN and decay study).  83-84:361-366. 1999
  • Electron trapping by self-trapped hole pairs and small rare-earth clusters in Sm-doped CaF2.  79:241-248. 1998
  • New trends in tunable lasers based on color center and radiationally pertubed doped crystals.  72-74:9-11. 1997
  • Photoluminescence studies in Sc : CaF2 and Sc,Ce : CaF2 crystals.  69:35-40. 1996
  • Raman spectroscopy of GaAs-AlAs superlattices: a study of interface roughness.  60-61:349-352. 1994
  • International Standard Serial Number (issn)

  • 0022-2313