Journal of Electronic Materials

Journal

Publication Venue For

  • Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates.  48:2226-2232. 2019
  • Electronic Band Structures of the Highly Desirable III–V Semiconductors: TB-mBJ DFT Studies.  45:3314-3323. 2016
  • Incorporation of Mg in Free-Standing HVPE GaN Substrates.  45:2692-2696. 2016
  • Reduction in the Number of Mg Acceptors with Al Concentration in AlxGa1−xN.  44:4139-4143. 2015
  • Cr-doped III-V nitrides: Potential candidates for spintronics.  40:1428-1436. 2011
  • Growth and characterization of pulsed-laser-deposited ilmenite-hematite thin films.  36:1224-1228. 2007
  • A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy.  36:623-628. 2007
  • Designing nanostructures for sensor applications.  35:846-851. 2006
  • The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy.  34:34-39. 2005
  • Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC.  32:444-447. 2003
  • Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study.  31:351-355. 2002
  • HF chemical etching of SiO2 on 4H and 6H SiC.  29:368-371. 2000
  • Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC.  28:144-147. 1999
  • Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition.  28:136-140. 1999
  • Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors.  27:838-841. 1998
  • Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition.  14:343-366. 1985
  • International Standard Serial Number (issn)

  • 0361-5235
  • Electronic International Standard Serial Number (eissn)

  • 1543-186X