Microelectronic Engineering

Journal

Overview
Identity

Publication Venue For

Dangling bond defects in SiC: The dependence on oxidation time. 48:269-272. 1999

Effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films. 48:347-350. 1999

Properties of Eδ' center in microelectronic grade oxide films. 36:197-200. 1997

International Standard Serial Number (issn)

0167-9317