Electron paramagnetic resonance (EPR) spectroscopy is a powerful tool to study the physical and chemical structure of point defects in crystalline semiconductors. Investigations throughout the past few decades have provided detailed descriptions of some of the most important intrinsic defects and impurities in silicon carbide. Several reviews have summarized the significant findings. This review expands the scope of earlier work by focusing on EPR studies of as-grown electronic grade SiC. Because the most recent technological interests focus on growing high-resistivity substrates for high frequency, high power devices, many of the defects discussed here are identified in semi-insulating 4H SiC. The access to high purity material has enabled the identification of at least one new centre, the positively charged carbon vacancy, while the detailed electronic structure of the others is still uncertain. Intentional and unintentional impurities also play a role. For this reason, vanadium and some shallow impurities will be briefly reviewed. Finally, the structure and chemistry of carbon-related defects thought to be located near the surface of SiC will be summarized.