Role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and AlGaAs alloys

Academic Article

Abstract

  • The role and interplay of basic structure parameters of arsenic precipitates on the ultrafast trapping of conduction band electrons have been studied in a series of low-temperature-grown GaAs and AlGaAs epilayers grown at various temperatures ranging from 170 up to 325°C and annealed at 600°C. Cross-sectional electron-transmission microscopy was used to determine the density and size of the precipitated arsenic clusters as a function of the growth temperature. The dependence of the electron trapping times (τ) on the spacing (R) and radius (α) of the arsenic precipitates has been systematically investigated by time-resolved pump-probe transient transmission spectroscopy. The electron trapping times follow a τ∝R 3/α law which holds for low-temperature-grown GaAs and is applicable for low-temperature-grown AlGaAs as well. This trend generalizes the electron trapping mechanism for low-temperature-grown and annealed GaAs and related semiconductor alloys. © 2002 American Institute of Physics.
  • Authors

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    Digital Object Identifier (doi)

    Author List

  • Loukakos PA; Kalpouzos C; Perakis IE; Hatzopoulos Z; Sfendourakis M; Kostantinidis G; Fotakis C
  • Start Page

  • 9863
  • End Page

  • 9868
  • Volume

  • 91
  • Issue

  • 12