Molecular sidebands of refractory elements for ISOL

Academic Article

Abstract

  • The formation of molecular sidebands of refractory elements, such as V, Re, Zr, Mo, Tc, is discussed. The focus is on in situ sideband formation and its advantage for the release process. An atomic48V beam has been produced in a two step process, forming the oxide in situ, transporting it through the target-ion source as a chloride and destroying the chlorine sideband in the ion source. The sideband formation of Re, Zr, Mo, Tc is discussed.
  • Authors

    Digital Object Identifier (doi)

    Start Page

  • 4252
  • End Page

  • 4256
  • Volume

  • 266
  • Issue

  • 19-20