Nitrogen defect concentration in chemical vapor deposited homoepitaxial diamond at high temperatures

Academic Article

Abstract

  • Homoepitaxial diamond films were grown on polished single crystal {100} oriented natural type IIa diamond circular substrates using high density microwave plasma chemical vapor deposition (MPCVD). Twelve homoepitaxial diamond films were grown under a variety of substrate temperature (1000 C-2000 C), methane concentration (1% - 3% in hydrogen gas) and processing pressure (60 - 150 torr). Electron paramagnetic resonance (EPR) studies demonstrate that nitrogen is largely incorporated as singly substitutional impurity (P1-center) and nitrogen's concentration is in the range of 10 - 100 parts per million. Nitrogen's concentration also shows a systematic decrease with increasing substrate temperatures. The temperature variation of nitrogen at high temperatures is discussed within a model where single substitutional nitrogen aggregates to form nitrogen defects which are not EPR active.
  • Authors

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    Author List

  • Van CS; Vohra YK
  • Start Page

  • 239
  • End Page

  • 244
  • Volume

  • 555