Hcp to fcc transition in silicon at 78 GPa and studies to 100 GPa

Academic Article

Abstract

  • The pressure-induced phase sequence of silicon has been studied to 100 GPa by energy-dispersive x-ray diffraction techniques. A new phase transition from hexagonal close-packed to face-centered cubic was observed at a volume compression of V/V0=0.4810.005 and 783 GPa, in excellent agreement with first-principles calculations of the phase stability of silicon at high pressures. This represents the lowest atomic number material for which a structural determination has been made to 100 GPa. © 1987 The American Physical Society.
  • Authors

    Published In

    Digital Object Identifier (doi)

    Author List

  • Duclos SJ; Vohra YK; Ruoff AL
  • Start Page

  • 775
  • End Page

  • 777
  • Volume

  • 58
  • Issue

  • 8