In this letter we present band gaps of II-VI semiconductors, calculated by
the full potential linearized augmented plane wave (FP-LAPW) method with the
modified Becke-Johnson (mBJ) potential. The accuracy of the calculated results
is assessed by comparing them with the experimentally measured values. After
careful analysis of the results presented in this paper, we found that the mBJ
potential is very efficient in the predication of the bandgaps of II-VI
semiconductors. It is also revealed that the effectiveness of mBJ is based on
the proper treatment of the d-orbitals in the highly correlated electron
system.
