Conducting boron-doped single-crystal diamond films for high pressure research

Academic Article

Abstract

  • Epitaxial boron-doped diamond films were grown by microwave plasma chemical vapor deposition for application as heating elements in high pressure diamond anvil cell devices. To a mixture of hydrogen, methane and oxygen, diborane concentrations of 240-1200 parts per million were added to prepare five diamond thin-film samples. Surface morphology has been observed to change depending on the amount of diborane added to the feed gas mixture. Single-crystal diamond film with a lowest room temperature resistivity of 18mΩcm was fabricated and temperature variation of resistivity was studied to a low temperature of 12 K. The observed minima in resistivity values with temperature for these samples have been attributed to a change in conduction mechanism from band conduction to hopping conduction. We also present a novel fabrication methodology for monocrystalline electrically conducting channels in diamond and present preliminary heating data with a boron-doped designer diamond anvil to 620K at ambient pressure. © 2011 Taylor & Francis.
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    Digital Object Identifier (doi)

    Author List

  • Samudrala GK; Tsoi G; Stanishevsky AV; Montgomery JM; Vohra YK; Weir ST
  • Start Page

  • 388
  • End Page

  • 398
  • Volume

  • 31
  • Issue

  • 3