Deposition of carbon films containing nitrogen by filtered pulsed cathodic arc discharge method

Academic Article


  • Nitrogenated carbon films with N/C ratio up to 0.65 have been prepared by a filtered pulsed cathodic arc discharge (PCAD) method at nitrogen pressure in the range 0.1-15 Pa. The influence of the process parameters and nitrogen pressure on the growth rate, chemical composition and quality of C:N films has been studied. The maximum N/C ratio was found at a gas pressure of 1-2 Pa. Raman study of films prepared at nitrogen pressure higher than 2 Pa showed a strong increase of the photoluminescence signal with a maximum at 2.2 eV. © 1998 Elsevier Science S.A.
  • Author List

  • Stanishevsky A; Khriachtchev L; Akula L
  • Start Page

  • 1190
  • End Page

  • 1195
  • Volume

  • 7
  • Issue

  • 8