Low resistance Pt and W ohmic metallizations to p-type 6H-SiC, using focused ion beam (FIB) surface-modification and in-situ direct-write metal deposition without annealing, are reported. FIB(Ga) surface-modification and in-situ deposition of Pt, and W showed minimum contact resistance values of 2.8×10-4 ohm-cm2 to 2.5×10-4 ohm-cm2, respectively. A comparison with ex-situ pulse laser deposited Pt on surface-modified areas showed comparable contact resistance values and similar behavior. Auger and secondary ion mass spectroscopy analysis showed a significant (approximately 4% a.c.) incorporation of Ga within a 15 nm distance from the SiC surface with surface-modification. Atomic force microscopy studies showed that surface-modification process smooths out the SiC surface significantly.