Critical Mg doping on the blue-light emission in p-type GaN thin films grown by metal-organic chemical-vapor deposition

Academic Article


  • The Mg-doping effect on the photoluminescence and the photocurrent spectra was investigated for various p-GaN thin films. At a low-concentration Mg-doping level, there exists the photoluminescence center on a donor and acceptor pair transition of a 3.28 eV band. This center correlates with the defect structures for a shallow donor of VGa and for an acceptor MgGa. The acceptor level showed a binding energy of 0.11-0.4 eV, which was observed at the PC center of 3.02-3.31 eV.
  • Authors

    Digital Object Identifier (doi)

    Author List

  • Kim K; Harrison JG
  • Start Page

  • 134
  • End Page

  • 139
  • Volume

  • 21
  • Issue

  • 1