Epitaxial diamond encapsulation of metal microprobes for high pressure experiments

Academic Article


  • Diamond anvils with diamond encapsulated thin-film microcircuits have been fabricated for ultrahigh pressure electrical conductivity experiments. The diamond films were homoepitaxially deposited onto the diamond anvil substrates with microwave plasma chemical vapor deposition using a 2% methane in hydrogen gas mixture and a diamond substrate temperature of 1300°C. The diamond embedded thin-film microprobes remain functional to megabar pressures. We have applied this technology to the study of the pressure-induced metallization of KI under pressures up to 1.8 Mbar. This technology has the potential of greatly advancing the pressure range of a number of existing high-pressure diagnostic techniques, and for expanding the capabilities of diamond anvil cells into new directions. © 2000 American Institute of Physics.
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    Digital Object Identifier (doi)

    Author List

  • Weir ST; Akella J; Aracne-Ruddle C; Vohra YK; Catledge SA
  • Start Page

  • 3400
  • End Page

  • 3402
  • Volume

  • 77
  • Issue

  • 21