Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

Academic Article

Abstract

  • We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr2+ emission in the technologically important 2-2.6 μm spectral range. © 2008 Springer-Verlag.
  • Digital Object Identifier (doi)

    Author List

  • Williams JE; Camata RP; Fedorov VV; Mirov SB
  • Start Page

  • 333
  • End Page

  • 335
  • Volume

  • 91
  • Issue

  • 2