Growth and characterization of pulsed-laser-deposited ilmenite-hematite thin films

Academic Article

Abstract

  • The ilmenite-hematite (1 - x) FeTiO 3 • xFe 2O 3 solid solution system is considered to be a novel material for spin-electronics, microelectronics, high-temperature electronics, and radhard electronics. This paper focuses on thin films of composition x = 0.33 grown on (100) MgO single-crystal substrates using pulsed-laser deposition (PLD) under different argon-oxygen mixtures. The surface of the MgO was found to possess MgO 2 crystals, yielding an orientation relationship, [001] MgO [011] MgO 2 and ( {1} 00)MgO ( {1} 10) MgO 2. The structural characterizations show that the films are crystalline and homogeneous without any secondary phase. The films show a weak and inclined (11 {2} 0) growth epitaxy. A bandgap of 3.4-3.7 eV was obtained for these films from optical measurements carried out in the UV-visible region. Electrical measurements confirmed the semiconducting behavior. However, the resistivity was found to increase substantially on the slightest addition of oxygen into the chamber. © 2007 TMS.
  • Digital Object Identifier (doi)

    Author List

  • Kale P; Padmini P; Dou J; Navarrete L; Shamsuzzoha M; Schad R; Pandey RK
  • Start Page

  • 1224
  • End Page

  • 1228
  • Volume

  • 36
  • Issue

  • 9