Quantitative imaging of dielectric permittivity and tunability with a near-field scanning microwave microscope

Academic Article

Abstract

  • We describe the use of a near-field scanning microwave microscope to image the permittivity and tunability of bulk and thin film dielectric samples on a length scale of about 1 μm. The microscope is sensitive to the linear permittivity, as well as to nonlinear dielectric terms, which can be measured as a function of an applied electric field. We introduce a versatile finite element model for the system, which allows quantitative results to be obtained. We demonstrate use of the microscope at 7.2 GHz with a 370 nm thick Ba0.6Sr0.4TiO3 thin film on a LaAlO3 substrate. This technique is nondestructive and has broadband (0.1-50 GHz) capability. The sensitivity of the microscope to changes in permittivity is Δ∈r=2 at ∈r=500, while the nonlinear dielectric tunability sensitivity is Δ∈113=10-3 (kV/cm)-1. © 2000 American Institute of Physics.
  • Published In

    Digital Object Identifier (doi)

    Author List

  • Steinhauer DE; Vlahacos CP; Wellstood FC; Anlage SM; Canedy C; Ramesh R; Stanishevsky A; Melngailis J
  • Start Page

  • 2751
  • End Page

  • 2758
  • Volume

  • 71
  • Issue

  • 7