Zvanut, Mary

Zvanut, Mary
Professor

Professor (P), Physics , College of Arts and Sciences 2011 -
Professor (S), Electrical & Computer Engineering , School of Engineering 2012 -

Selected Publications

Academic Article

Year	Title	Altmetric
2018	A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy. Journal of Applied Physics. 123. 2018
2016	Effect of local fields on the Mg acceptor in GaN films and GaN substrates. Journal of Applied Physics. 120. 2016
2016	A model for Be-related photo-absorption in compensated GaN:Be substrates. Journal of Applied Physics. 120. 2016
2016	Incorporation of Mg in Free-Standing HVPE GaN Substrates. Journal of Electronic Materials. 45:2692-2696. 2016
2015	Reduction in the Number of Mg Acceptors with Al Concentration in AlxGa1−xN. Journal of Electronic Materials. 44:4139-4143. 2015
2015	The effects of Al on the neutral Mg acceptor impurity in AlxGa1-xN. physica status solidi (c). 12:357-360. 2015
2015	Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method. physica status solidi (b). 252:923-927. 2015
2015	Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method. physica status solidi (c). 12:338-340. 2015
2014	Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals. Optical Materials. 37:262-266. 2014
2014	The effect of growth parameters on the Mg acceptor in InxGa1-xN: MG and AlxGa1-xN: Mg. physica status solidi (c). 11:594-597. 2014
2012	The source of holes in p-type In xGa 1-xN films. Journal of Applied Physics. 112. 2012
2012	Charge transfer in semi-insulating Fe-doped GaN. Journal of Applied Physics. 112. 2012
2011	Passivation and activation of Mg acceptors in heavily doped GaN. Journal of Applied Physics. 110. 2011
2010	Iron-related defect levels in SrTiO3 measured by photoelectron paramagnetic resonance spectroscopy. Journal of Applied Physics. 107. 2010
2009	High-field phenomena of qubits. Applied Magnetic Resonance. 36:259-268. 2009
2009	Photoinduced behavior of the VC C Si - Pair defect in 4H -SiC grown by physical vapor transport and halide chemical vapor deposition. Journal of Applied Physics. 106. 2009
2009	Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC. Journal of Applied Physics. 105. 2009
2008	Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance. Journal of Applied Physics. 104. 2008
2008	An annealing study of an oxygen vacancy related defect in SrTiO3 substrates. Journal of Applied Physics. 104. 2008
2008	A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition. Journal of Materials Science: Materials in Electronics. 19:678-681. 2008
2007	Nitrogen-related point defect in 4H and 6H SiC. Physica B: Condensed Matter. 401-402:73-76. 2007
2007	A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy. Journal of Electronic Materials. 36:623-628. 2007
2007	Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC. Journal of Applied Physics. 101. 2007
2006	The acceptor level for vanadium in 4H and 6H SiC. Physica B: Condensed Matter. 376-377:346-349. 2006
2005	Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC. Journal of Applied Physics. 97. 2005
2005	The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy. Journal of Electronic Materials. 34:34-39. 2005
2004	Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC. Materials Science Forum. 457-460:489-492. 2004
2004	Electron paramagnetic resonance of electronic-grade SiC substrates. Journal of Physics: Condensed Matter. 16:R1341-R1367. 2004
2004	Electron paramagnetic resonance of electronic-grade SiC substrates. Journal of Physics: Condensed Matter. 16. 2004
2004	Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC. Journal of Applied Physics. 96:5484-5489. 2004
2004	High temperature Hall effect measurements of semi-insulating 4H-SiC substrates. Solid-State Electronics. 48:1693-1697. 2004
2004	Absorption and photoluminescence studies of CdGa2S 4:Cr. Optics Communications. 233:403-410. 2004
2004	Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy. Journal of Applied Physics. 95:1884-1887. 2004
2003	240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC. Physical review B: Condensed matter and materials physics. 68. 2003
2003	Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC. Journal of Electronic Materials. 32:444-447. 2003
2002	The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance. Applied Physics Letters. 80:410-412. 2002
2002	Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study. Journal of Electronic Materials. 31:351-355. 2002
2001	Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiC. Physica B: Condensed Matter. 308-310:671-674. 2001
2001	Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates. Journal of Applied Physics. 89:955-959. 2001
2000	Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC. Journal of Applied Physics. 88:4122-4127. 2000
2000	Effects of oxidation conditions on the concentration of carbon dangling bonds in oxidized 6H-SiC. Materials Science Forum. 338. 2000
2000	HF chemical etching of SiO2 on 4H and 6H SiC. Journal of Electronic Materials. 29:368-371. 2000
1999	Reduction and creation of paramagnetic centers on surfaces of three different polytypes of SiC. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures. 17:1627-1631. 1999
1999	Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films. Journal of Applied Physics. 86:2628-2637. 1999
1999	Dangling bond defects in SiC: The dependence on oxidation time. Microelectronic Engineering. 48:269-272. 1999
1999	Effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films. Microelectronic Engineering. 48:347-350. 1999
1999	Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC. Journal of Electronic Materials. 28:144-147. 1999
1998	Hydrothermal behavior of diamond. Diamond and Related Materials. 7:1459-1465. 1998
1998	Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors. Journal of Electronic Materials. 27:838-841. 1998
1997	Generation and annealing kinetics of oxygen vacancy and oxygen excess centers in thin film SiO2. Materials Science Forum. 239-241:7-10. 1997
1997	The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC. Applied Physics Letters. 71:2148-2150. 1997
1997	Properties of Eδ' center in microelectronic grade oxide films. Microelectronic Engineering. 36:197-200. 1997
1996	Production of E′δ center induced by dry heat treatment of nonburied SiO2 films. Applied Physics Letters. 69:28-30. 1996
1995	Erratum: G tensor for substitutional nitrogen in diamond (Physical Review B (1995) 51, 13, (8688)). Physical Review B (Condensed Matter). 51:8688. 1995
1995	Generation of thermally induced defects in buried SiO2 films. Journal of Applied Physics. 77:4329-4333. 1995
1995	Erratum: g tensor for substitutional nitrogen in diamond. Physical Review B (Condensed Matter). 51:8688. 1995
1994	Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides. IEEE Transactions on Nuclear Science. 41:2284-2290. 1994
1994	Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy. Applied Physics Letters. 65:2287-2289. 1994
1994	Nitrogen in the isotopically enriched ¹²C diamond. Applied Physics Letters. 65:2951-2953. 1994
1994	Effect of Supplemental O Implantation on the Radiation-Induced Hole Traps in SIMOX Buried Oxides. IEEE Transactions on Nuclear Science. 41:2284-2290. 1994
1994	G tensor for substitutional nitrogen in diamond. Physical Review B (Condensed Matter). 49:15392-15395. 1994
1993	Atomic structure of Ge-related point defects in Ge-incorporated oxide films. Applied Physics Letters. 63:3049-3051. 1993
1992	Distribution of Ge in O⁺ implanted silicon. Applied Physics Letters. 61:3142-3144. 1992
1992	Radiation-induced E' centers in H2-annealed oxide films. Applied Physics Letters. 60:2989-2991. 1992
1992	Interfacial point defects in heavily implanted silicon germanium alloys. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures. 10:2026-2026. 1992
1992	Effects of mixed-valent composition and bathing environment on solid-state electron self-exchanges in osmium bipyridine redox polymer films. The Journal of physical chemistry. 96:962-970. 1992
1991	SIMOX with epitaxial silicon: Point defects and positive charge. IEEE Transactions on Nuclear Science. 38:1253-1258. 1991
1991	Temperature and current dependence of electroluminescence in a-Si: H. Philosophical Magazine B. 63:175-187. 1991
1990	Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling. Physical Review B (Condensed Matter). 41:8313-8317. 1990
1989	Rechargeable E' centers in sputter-deposited silicon dioxide films. Applied Physics Letters. 54:2118-2120. 1989
1989	Electrical-field-driven electron self-exchange in a mixed-valent osmium (II/III) bipyridine polymer: Solid-state reactions of low exothermicity. The Journal of physical chemistry. 93:4620-4627. 1989
1988	A defect relaxation model for bias instabilities in metal-oxide- semiconductor capacitors. Journal of Applied Physics. 64:2221-2223. 1988
1985	Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition. Journal of Electronic Materials. 14:343-366. 1985
1985	Electrical Properties of Silicon Dioxide Films Fabricated at 700°C III. High Pressure Thermal Oxidation. Journal of The Electrochemical Society. 132:2706-2713. 1985