| Year |
Title |
Altmetric |
| 2022
|
Optical transitions of gallium vacancies in neutron irradiated β -Ga2O3.
Journal of Applied Physics.
132.
2022
|
|
| 2022
|
Optical transitions of neutral Mg in Mg-doped β -Ga2O3.
APL Materials.
10.
2022
|
|
| 2021
|
Fe-related optical transitions in floating zone and Czochralski grown β -Ga2O3crystals.
Journal of Applied Physics.
130.
2021
|
|
| 2021
|
Carbon complexes in highly C-doped GaN.
Physical Review B.
104.
2021
|
|
| 2021
|
Charge trapping at Fe due to midgap levels in Ga2O3.
Journal of Applied Physics.
129.
2021
|
|
| 2020
|
A Deep Carbon-Related Acceptor Identified through Photo-Induced Electron Paramagnetic Resonance.
Physica Status Solidi B: Basic Solid State Physics.
257.
2020
|
|
| 2020
|
Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy.
Journal of Applied Physics.
127.
2020
|
|
| 2019
|
Optical absorption of Fe in doped Ga2O3.
Journal of Applied Physics.
126.
2019
|
|
| 2019
|
Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates.
Journal of Electronic Materials.
48:2226-2232.
2019
|
|
| 2019
|
Photo-EPR study of compensated defects in Be-doped GaN substrates.
Journal of Applied Physics.
125.
2019
|
|
| 2019
|
Small non-uniform basal crystal fields in HVPE free-standing GaN:Mg as evidenced by angular dependent and frequency-dependent EPR.
Journal of Physics: Condensed Matter.
31.
2019
|
|
| 2018
|
Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN.
Journal of Applied Physics.
124.
2018
|
|
| 2018
|
A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy.
Journal of Applied Physics.
123.
2018
|
|
| 2016
|
Effect of local fields on the Mg acceptor in GaN films and GaN substrates.
Journal of Applied Physics.
120.
2016
|
|
| 2016
|
A model for Be-related photo-absorption in compensated GaN:Be substrates.
Journal of Applied Physics.
120.
2016
|
|
| 2016
|
Incorporation of Mg in Free-Standing HVPE GaN Substrates.
Journal of Electronic Materials.
45:2692-2696.
2016
|
|
| 2015
|
Reduction in the Number of Mg Acceptors with Al Concentration in AlxGa1−xN.
Journal of Electronic Materials.
44:4139-4143.
2015
|
|
| 2015
|
Determination of an acceptor level in bulk GaN grown by high nitrogen pressure solution method.
Physica Status Solidi B: Basic Solid State Physics.
252:923-927.
2015
|
|
| 2015
|
Electron paramagnetic resonance studies of bulk Mg-doped GaN grown by high nitrogen pressure solution method.
Physica Status Solidi C: Current Topics in Solid State Physics.
12:338-340.
2015
|
|
| 2015
|
The effects of Al on the neutral Mg acceptor impurity in AlxGa1-xN.
Physica Status Solidi C: Current Topics in Solid State Physics.
12:357-360.
2015
|
|
| 2014
|
Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals.
Optical Materials.
37:262-266.
2014
|
|
| 2014
|
The effect of growth parameters on the Mg acceptor in InxGa1-xN: MG and AlxGa1-xN: Mg.
Physica Status Solidi C: Current Topics in Solid State Physics.
11:594-597.
2014
|
|
| 2012
|
The source of holes in p-type In xGa 1-xN films.
Journal of Applied Physics.
112.
2012
|
|
| 2012
|
Charge transfer in semi-insulating Fe-doped GaN.
Journal of Applied Physics.
112.
2012
|
|
| 2011
|
Passivation and activation of Mg acceptors in heavily doped GaN.
Journal of Applied Physics.
110.
2011
|
|
| 2010
|
Iron-related defect levels in SrTiO3 measured by photoelectron paramagnetic resonance spectroscopy.
Journal of Applied Physics.
107.
2010
|
|
| 2009
|
High-field phenomena of qubits.
Applied Magnetic Resonance.
36:259-268.
2009
|
|
| 2009
|
Photoinduced behavior of the VC C Si - Pair defect in 4H -SiC grown by physical vapor transport and halide chemical vapor deposition.
Journal of Applied Physics.
106.
2009
|
|
| 2009
|
Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC.
Journal of Applied Physics.
105.
2009
|
|
| 2008
|
Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance.
Journal of Applied Physics.
104.
2008
|
|
| 2008
|
An annealing study of an oxygen vacancy related defect in SrTiO3 substrates.
Journal of Applied Physics.
104.
2008
|
|
| 2008
|
A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition.
Journal of Materials Science: Materials in Electronics.
19:678-681.
2008
|
|
| 2007
|
Nitrogen-related point defect in 4H and 6H SiC.
Physica B: Condensed Matter.
401-402:73-76.
2007
|
|
| 2007
|
A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy.
Journal of Electronic Materials.
36:623-628.
2007
|
|
| 2007
|
Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC.
Journal of Applied Physics.
101.
2007
|
|
| 2006
|
The acceptor level for vanadium in 4H and 6H SiC.
Physica B: Condensed Matter.
376-377:346-349.
2006
|
|
| 2005
|
Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC.
Journal of Applied Physics.
97.
2005
|
|
| 2005
|
The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy.
Journal of Electronic Materials.
34:34-39.
2005
|
|
| 2004
|
Electron paramagnetic resonance of electronic-grade SiC substrates.
Journal of Physics: Condensed Matter.
16:R1341-R1367.
2004
|
|
| 2004
|
Electron paramagnetic resonance of electronic-grade SiC substrates.
Journal of Physics: Condensed Matter.
16.
2004
|
|
| 2004
|
Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC.
Journal of Applied Physics.
96:5484-5489.
2004
|
|
| 2004
|
High temperature Hall effect measurements of semi-insulating 4H-SiC substrates.
Solid-State Electronics.
48:1693-1697.
2004
|
|
| 2004
|
Absorption and photoluminescence studies of CdGa2S 4:Cr.
Optics Communications.
233:403-410.
2004
|
|
| 2004
|
Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy.
Journal of Applied Physics.
95:1884-1887.
2004
|
|
| 2004
|
Optically induced transitions among point defects in high purity and vanadium-doped semi-insulating 4H SiC.
Materials Science Forum.
457-460:489-492.
2004
|
|
| 2003
|
240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC.
Physical Review B: Condensed Matter and Materials Physics.
68.
2003
|
|
| 2003
|
Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC.
Journal of Electronic Materials.
32:444-447.
2003
|
|
| 2002
|
The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance.
Applied Physics Letters.
80:410-412.
2002
|
|
| 2002
|
Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study.
Journal of Electronic Materials.
31:351-355.
2002
|
|
| 2001
|
Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H-SiC.
Physica B: Condensed Matter.
308-310:671-674.
2001
|
|
| 2001
|
Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates.
Journal of Applied Physics.
89:955-959.
2001
|
|
| 2000
|
Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC.
Journal of Applied Physics.
88:4122-4127.
2000
|
|
| 2000
|
Effects of oxidation conditions on the concentration of carbon dangling bonds in oxidized 6H-SiC.
Materials Science Forum.
338.
2000
|
|
| 2000
|
HF chemical etching of SiO2 on 4H and 6H SiC.
Journal of Electronic Materials.
29:368-371.
2000
|
|
| 1999
|
Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films.
Journal of Applied Physics.
86:2628-2637.
1999
|
|
| 1999
|
Dangling bond defects in SiC: The dependence on oxidation time.
Microelectronic Engineering.
48:269-272.
1999
|
|
| 1999
|
Effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films.
Microelectronic Engineering.
48:347-350.
1999
|
|
| 1999
|
Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC.
Journal of Electronic Materials.
28:144-147.
1999
|
|
| 1999
|
Reduction and creation of paramagnetic centers on surfaces of three different polytypes of SiC.
Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.
17:1627-1631.
1999
|
|
| 1998
|
Hydrothermal behavior of diamond.
Diamond and Related Materials.
7:1459-1465.
1998
|
|
| 1998
|
Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors.
Journal of Electronic Materials.
27:838-841.
1998
|
|
| 1997
|
The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC.
Applied Physics Letters.
71:2148-2150.
1997
|
|
| 1997
|
Generation and annealing kinetics of oxygen vacancy and oxygen excess centers in thin film SiO2.
Materials Science Forum.
239-241:7-10.
1997
|
|
| 1997
|
Properties of Eδ' center in microelectronic grade oxide films.
Microelectronic Engineering.
36:197-200.
1997
|
|
| 1996
|
Production of E′δ center induced by dry heat treatment of nonburied SiO2 films.
Applied Physics Letters.
69:28-30.
1996
|
|
| 1995
|
Erratum: G tensor for substitutional nitrogen in diamond (Physical Review B (1995) 51, 13, (8688)).
Physical Review B (Condensed Matter).
51:8688.
1995
|
|
| 1995
|
Generation of thermally induced defects in buried SiO2 films.
Journal of Applied Physics.
77:4329-4333.
1995
|
|
| 1995
|
Erratum: g tensor for substitutional nitrogen in diamond.
Physical Review B (Condensed Matter).
51:8688.
1995
|
|
| 1994
|
Effect of supplemental O implantation on the radiation-induced hole traps in SIMOX buried oxides.
IEEE Transactions on Nuclear Science.
41:2284-2290.
1994
|
|
| 1994
|
Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy.
Applied Physics Letters.
65:2287-2289.
1994
|
|
| 1994
|
Nitrogen in the isotopically enriched 12C diamond.
Applied Physics Letters.
65:2951-2953.
1994
|
|
| 1994
|
Effect of Supplemental O Implantation on the Radiation-Induced Hole Traps in SIMOX Buried Oxides.
IEEE Transactions on Nuclear Science.
41:2284-2290.
1994
|
|
| 1994
|
G tensor for substitutional nitrogen in diamond.
Physical Review B (Condensed Matter).
49:15392-15395.
1994
|
|
| 1993
|
Atomic structure of Ge-related point defects in Ge-incorporated oxide films.
Applied Physics Letters.
63:3049-3051.
1993
|
|
| 1992
|
Distribution of Ge in O+ implanted silicon.
Applied Physics Letters.
61:3142-3144.
1992
|
|
| 1992
|
Radiation-induced E' centers in H2-annealed oxide films.
Applied Physics Letters.
60:2989-2991.
1992
|
|
| 1992
|
Interfacial point defects in heavily implanted silicon germanium alloys.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society.
10:2026-2026.
1992
|
|
| 1992
|
Effects of mixed-valent composition and bathing environment on solid-state electron self-exchanges in osmium bipyridine redox polymer films.
The Journal of physical chemistry.
96:962-970.
1992
|
|
| 1991
|
SIMOX with epitaxial silicon: Point defects and positive charge.
IEEE Transactions on Nuclear Science.
38:1253-1258.
1991
|
|
| 1991
|
Temperature and current dependence of electroluminescence in a-Si: H.
Philosophical Magazine B.
63:175-187.
1991
|
|
| 1990
|
Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunneling.
Physical Review B (Condensed Matter).
41:8313-8317.
1990
|
|
| 1989
|
Rechargeable E' centers in sputter-deposited silicon dioxide films.
Applied Physics Letters.
54:2118-2120.
1989
|
|
| 1989
|
Electrical-field-driven electron self-exchange in a mixed-valent osmium (II/III) bipyridine polymer: Solid-state reactions of low exothermicity.
The Journal of physical chemistry.
93:4620-4627.
1989
|
|
| 1988
|
A defect relaxation model for bias instabilities in metal-oxide- semiconductor capacitors.
Journal of Applied Physics.
64:2221-2223.
1988
|
|
| 1985
|
Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition.
Journal of Electronic Materials.
14:343-366.
1985
|
|
| 1985
|
Electrical Properties of Silicon Dioxide Films Fabricated at 700°C III. High Pressure Thermal Oxidation.
Journal of Electrochemical Society.
132:2706-2713.
1985
|
|
