Journal of Applied Physics

Journal

Publication Venue For

  • Optical transitions for impurities in Ga2O3 as determined by photo-induced electron paramagnetic resonance spectroscopy.  127. 2020
  • Optical absorption of Fe in doped Ga2O3.  126. 2019
  • Photo-EPR study of compensated defects in Be-doped GaN substrates.  125. 2019
  • Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN.  124. 2018
  • High pressure high temperature devitrification of Fe78B13Si9 metallic glass with simultaneous x-ray structural characterization.  123. 2018
  • A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy.  123. 2018
  • Effect of local fields on the Mg acceptor in GaN films and GaN substrates.  120. 2016
  • A model for Be-related photo-absorption in compensated GaN:Be substrates.  120. 2016
  • High-pressure high-temperature phase diagram of gadolinium studied using a boron-doped heater anvil.  119. 2016
  • Hot-spot detection and calibration of a scanning thermal probe with a noise thermometry gold wire sample.  113. 2013
  • Silicon vacancy color center photoluminescence enhancement in nanodiamond particles by isolated substitutional nitrogen on {100} surfaces.  113. 2013
  • The source of holes in p-type In xGa 1-xN films.  112. 2012
  • Effect of phase transition on the optoelectronic properties of Zn 1-xMg xS.  112. 2012
  • Charge transfer in semi-insulating Fe-doped GaN.  112. 2012
  • High pressure melting curve of tin measured using an internal resistive heating technique to 45 GPa.  111. 2012
  • Passivation and activation of Mg acceptors in heavily doped GaN.  110. 2011
  • Ab initio study of the bandgap engineering of Al1-xGa xN for optoelectronic applications.  109. 2011
  • Nanocrystals formation and intense green emission in thermally annealed AlN:Ho films for microlaser cavities and photonic applications.  108. 2010
  • Iron-related defect levels in SrTiO3 measured by photoelectron paramagnetic resonance spectroscopy.  107. 2010
  • Photoinduced behavior of the VC C Si - Pair defect in 4H -SiC grown by physical vapor transport and halide chemical vapor deposition.  106. 2009
  • Structural stability and compressibility of group IV transition metals-based bulk metallic glasses under high pressure.  106. 2009
  • Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC.  105. 2009
  • Measurements of optical cross sections of the carbon vacancy in 4H-SiC by time-dependent photoelectron paramagnetic resonance.  104. 2008
  • Network structure and thermal stability study of high temperature seal glass.  104. 2008
  • An annealing study of an oxygen vacancy related defect in SrTiO3 substrates.  104. 2008
  • Magnetic properties of ilmenite-hematite films and bulk samples.  103. 2008
  • Preparation and characterization of epitaxial ilmenite-hematite films.  101. 2007
  • Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC.  101. 2007
  • Calibration of an isotopically enriched carbon-13 layer pressure sensor to 156 GPa in a diamond anvil cell.  99. 2006
  • Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC.  97. 2005
  • Optical defect centers and surface morphology of isotopically enriched diamond layers in designer diamond anvils.  97. 2005
  • Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H-SiC.  96:5484-5489. 2004
  • Real-space imaging of current distributions at the submicron scale using magnetic force microscopy: Inversion methodology.  95:2477-2486. 2004
  • Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy.  95:1884-1887. 2004
  • Radiation damage and its recovery in focused ion beam fabricated ferroelectric capacitors.  92:3275-3278. 2002
  • Test of response linearity for magnetic force microscopy data.  92:1256-1261. 2002
  • Role of As precipitates on ultrafast electron trapping in low-temperature-grown GaAs and AlGaAs alloys.  91:9863-9868. 2002
  • Nanoindentation hardness and adhesion investigations of vapor deposited nanostructured diamond films.  91:5347-5352. 2002
  • Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates.  89:955-959. 2001
  • Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC.  88:4122-4127. 2000
  • Modification of hydrogen-free amorphous carbon films by focused-ion-beam milling.  86:7052-7058. 1999
  • Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films.  86:2628-2637. 1999
  • Effect of nitrogen addition on the microstructure and mechanical properties of diamond films grown using high-methane concentrations.  86:698-700. 1999
  • Ultrapressure equation of state of cerium metal to 208 GPa.  85:2451-2453. 1999
  • High density plasma processing of nanostructured diamond films on metals.  84:6469-6471. 1998
  • Mechanical properties and quality of diamond films synthesized on Ti-6Al-4V alloy using the microwave plasmas of CH4/H2 and CO/H2 systems.  83:198-204. 1998
  • Photoluminescence and x-ray-diffraction studies on Sm-doped yttrium aluminum garnet to ultrahigh pressures of 338 GPa.  79:7978-7982. 1996
  • Generation of thermally induced defects in buried SiO2 films.  77:4329-4333. 1995
  • High density plasma processing of diamond films on titanium: Residual stress and adhesion measurements.  78:7053-7058. 1995
  • The closing diamond anvil optical window in multimegabar research.  69:6413-6416. 1991
  • Effect of undoped GaAs spacers on the characteristics of GaAs-(Al,Ga)As-GaAs single barrier structures.  65:1183-1188. 1989
  • A defect relaxation model for bias instabilities in metal-oxide- semiconductor capacitors.  64:2221-2223. 1988
  • Interfacial conditions for thermomechanical equilibrium in two-phase crystals.  59:2735-2746. 1986
  • Thermomechanical equilibrium in solid-fluid systems with curved interfaces.  58:816-824. 1985
  • Effect of ion bombardment on the surface composition of Cu-Ga alloys studied by differential reflectometry and AES.  48:2776-2778. 1977
  • International Standard Serial Number (issn)

  • 0021-8979
  • Electronic International Standard Serial Number (eissn)

  • 1089-7550