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Publication Venue For
Incorporation of Carbon in Free-Standing HVPE-Grown GaN Substrates
. 48:2226-2232.
2019
Electronic Band Structures of the Highly Desirable III–V Semiconductors: TB-mBJ DFT Studies
. 45:3314-3323.
2016
Incorporation of Mg in Free-Standing HVPE GaN Substrates
. 45:2692-2696.
2016
Reduction in the Number of Mg Acceptors with Al Concentration in Al
x
Ga
1−x
N
. 44:4139-4143.
2015
Cr-doped III-V nitrides: Potential candidates for spintronics
. 40:1428-1436.
2011
Growth and characterization of pulsed-laser-deposited ilmenite-hematite thin films
. 36:1224-1228.
2007
A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy
. 36:623-628.
2007
Designing nanostructures for sensor applications
. 35:846-851.
2006
The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy
. 34:34-39.
2005
Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC
. 32:444-447.
2003
Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study
. 31:351-355.
2002
HF chemical etching of SiO
2
on 4H and 6H SiC
. 29:368-371.
2000
Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SiC
. 28:144-147.
1999
Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition
. 28:136-140.
1999
Near-interface trapped charge induced by Fowler-Nordheim injection in hydrogen or argon annealed MOS capacitors
. 27:838-841.
1998
Electrical properties of silicon dioxide films fabricated at 700°C. II: Low pressure hydride deposition
. 14:343-366.
1985
Identity
International Standard Serial Number (issn)
0361-5235
Electronic International Standard Serial Number (eissn)
1543-186X